DMN2230U new product n-channel enhancement mode mosfet features ? low on-resistance ? 110 m @ v gs = 4.5v ? 145 m @ v gs = 2.5v ? 230 m @ v gs = 1.8v ? low gate threshold voltage ? low input capacitance ? fast switching speed ? lead, halogen and antimony free, rohs compliant "green" device (notes 1, 2 and 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.008 grams (approximate) ordering information (note 4) part number case packaging DMN2230U-7 sot23 3000/tape & reel notes: 1. no purposefully added lead. halogen and antimony free. 2. product manufactured with green moldi ng compound and does not contain halogens or sb 2 o 3 fire retardants. marking information date code key year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 code u v w x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot23 top view top view internal schematic d gs 22n = marking code ym = date code marking y = year (ex: u = 2007) m = month (ex: 9 = september) 22n ym 1 of 2 sales@zpsemi.com www.zpsemi.com
notes: 3. device mounted on fr-4 pcb, or minimum recommended pad layout new product maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 12 v drain current (note 5) i d 2.0 a pulsed drain current (note 6) i dm 7 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 5) p d 600 mw thermal resistance, junction to ambient r ja 208 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 10 a zero gate voltage drain current i dss ? ? 1 a v ds = 20v, v gs = 0v gate-source leakage i gss ? ? 10 a v gs = 12v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) 0.5 ? 1.0 v v ds = v cs , i d = 250 a static drain-source on-resistance r ds (on) ? 81 113 170 110 145 230 m v gs = 4.5v, i d = 2.5a v gs = 2.5v, i d = 1.5a v gs = 1.8v, i d = 1.0a forward transfer admittance |y fs | ? 5 ? s v ds = 5v, i d = 2.4a diode forward voltage (note 7) v sd ? 0.8 1.1 v v gs = 0v, i s = 1.05a dynamic characteristics input capacitance c iss ? 188 ? pf v ds = 10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 44 ? pf reverse transfer capacitance c rss ? 30 ? pf total gate charge q g ? 2.3 ? nc v ds = 10v, i d = 11.6a gate-source charge q g s ? 0.3 ? nc gate-drain charge q g d ? 0.5 ? nc turn-on delay time t d ( on ) ? 8 ? ns v dd = 10v, r l = 10 i d = 1a, v gen = 4.5v, r g = 6 rise time t r ? 3.8 ? turn-off delay time t d ( off ) ? 19.6 ? fall time t f ? 8.3 ? 4. repetitive rating, pulse width limited by junction temperature. 5. short duration pulse test used to minimize self-heating effect. DMN2230U n-channel enhancement mode mosfet 2 of 2 sales@zpsemi.com www.zpsemi.com
|
